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Ultra-sensitive PIN and avalanche photodiode receivers / Horst Zimmermann.

By: Contributor(s): Material type: TextSeries: IOP (Series). Release 23. | IOP series in advances in optics, photonics and optoelectronics | IOP ebooks. 2023 collection.Publisher: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2023]Description: 1 online resource (various pagings) : illustrations (some color)Content type:
  • text
Media type:
  • electronic
Carrier type:
  • online resource
ISBN:
  • 9780750354370
  • 9780750354363
Subject(s):
Additional physical formats: Print version:: No titleLOC classification:
  • TK8360.O67 .Z568 2023eb
Online resources:
Available additional physical forms:
  • Also available in print.
Contents:
1. Motivation -- 1.1. PIN-photodiode and APD receivers -- 1.2. SPAD receivers -- 1.3. Quantum image sensors -- 1.4. The principle of ultra-sensitive PIN and avalanche photodiode receivers
2. Basics of photodiodes -- 2.1. Optical absorption and photogeneration -- 2.2. Drift and diffusion -- 2.3. Width of space-charge region and capacitance -- 2.4. Impact ionisation -- 2.5. Breakdown voltage
3. Basics of noise and sensitivity -- 3.1. Thermal noise -- 3.2. Shot noise -- 3.3. 1/f noise -- 3.4. Noise in field-effect transistors -- 3.5. Noise of PIN-FET receiver -- 3.6. Sensitivity -- 3.7. TIA noise -- 3.8. Noise bandwidth -- 3.9. Noise of integrator -- 3.10. Excess noise of APDs -- 3.11. Photon noise -- 3.12. Reset noise
4. Basics of optical receivers -- 4.1. Resistive-feedback transimpedance amplifiers -- 4.2. Current amplifiers -- 4.3. Integrating optical receivers
5. Low-capacitance photodiodes -- 5.1. PIN photodiodes--a predictive insight -- 5.2. PIN photodiodes in 0.18 [mu]m CMOS -- 5.3. Avalanche photodiodes -- 5.4. Multi-dot photodiodes for large photosensitive areas -- 5.5. Isolation of circuits
6. Ultra-sensitive PIN photodiode receivers -- 6.1. Inverter integrator in 0.35 [mu]m CMOS -- 6.2. Integrator with common-source amplifier in 0.35 [mu]m CMOS -- 6.3. Inverter integrator in 0.18 [mu]m CMOS -- 6.4. Integrator with common-source amplifier in 0.18 [mu]m CMOS -- 6.5. Reset-less integrating receiver -- 6.6. Reset-less integrating receiver with punch-through device
7. Ultra-sensitive avalanche photodiode receivers -- 7.1. Three-inverter TIA with resistive feedback -- 7.2. Three-inverter TIA with negative capacitance and resistive feedback -- 7.3. Integrating APD receivers
8. Summary and completion -- 8.1. Recapitulation -- 8.2. Comparison.
Abstract: This book focuses on ultra-sensitive PIN and avalanche photodiode receiver (USPAR) ICs for data communication. After more than 20 years of exploitation of the pin-photodiode CMOS technology leading to efficient APD and SPAD receivers and sensors, this book describes how ultra-sensitive PIN photodiode receivers close the loop back to PIN photodiode ICs. In contrast to conventional optical receivers, which are based on resistive-feedback transimpedance amplifiers (TIAs), the book uses charge integration on small photodiodes with a low capacitance known from image sensors to reduce the noise considerably -- even better sensitivity than with SPAD receivers is achieved. To obtain a much larger light sensitive area as in pixels of image sensors, innovative low-capacitance pin-finger and dot photodiodes are introduced. Important advantages of USPAR ICs are much lower circuit complexity, much smaller chip area and much lower power consumption as of SPAD receivers. In addition, error correction can be avoided. Detailed investigations of photodetectors and integrating amplifiers with many surprises and astonishing results of newest research will be described. Part of IPEM-IOP Series in Advances in Optics, Photonics and Optoelectronics.
Item type: List(s) this item appears in: Titluri cărți electronice Institute of Physics 2025 (221 titluri)
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"Version: 20231001"--Title page verso.

Includes bibliographical references.

1. Motivation -- 1.1. PIN-photodiode and APD receivers -- 1.2. SPAD receivers -- 1.3. Quantum image sensors -- 1.4. The principle of ultra-sensitive PIN and avalanche photodiode receivers

2. Basics of photodiodes -- 2.1. Optical absorption and photogeneration -- 2.2. Drift and diffusion -- 2.3. Width of space-charge region and capacitance -- 2.4. Impact ionisation -- 2.5. Breakdown voltage

3. Basics of noise and sensitivity -- 3.1. Thermal noise -- 3.2. Shot noise -- 3.3. 1/f noise -- 3.4. Noise in field-effect transistors -- 3.5. Noise of PIN-FET receiver -- 3.6. Sensitivity -- 3.7. TIA noise -- 3.8. Noise bandwidth -- 3.9. Noise of integrator -- 3.10. Excess noise of APDs -- 3.11. Photon noise -- 3.12. Reset noise

4. Basics of optical receivers -- 4.1. Resistive-feedback transimpedance amplifiers -- 4.2. Current amplifiers -- 4.3. Integrating optical receivers

5. Low-capacitance photodiodes -- 5.1. PIN photodiodes--a predictive insight -- 5.2. PIN photodiodes in 0.18 [mu]m CMOS -- 5.3. Avalanche photodiodes -- 5.4. Multi-dot photodiodes for large photosensitive areas -- 5.5. Isolation of circuits

6. Ultra-sensitive PIN photodiode receivers -- 6.1. Inverter integrator in 0.35 [mu]m CMOS -- 6.2. Integrator with common-source amplifier in 0.35 [mu]m CMOS -- 6.3. Inverter integrator in 0.18 [mu]m CMOS -- 6.4. Integrator with common-source amplifier in 0.18 [mu]m CMOS -- 6.5. Reset-less integrating receiver -- 6.6. Reset-less integrating receiver with punch-through device

7. Ultra-sensitive avalanche photodiode receivers -- 7.1. Three-inverter TIA with resistive feedback -- 7.2. Three-inverter TIA with negative capacitance and resistive feedback -- 7.3. Integrating APD receivers

8. Summary and completion -- 8.1. Recapitulation -- 8.2. Comparison.

This book focuses on ultra-sensitive PIN and avalanche photodiode receiver (USPAR) ICs for data communication. After more than 20 years of exploitation of the pin-photodiode CMOS technology leading to efficient APD and SPAD receivers and sensors, this book describes how ultra-sensitive PIN photodiode receivers close the loop back to PIN photodiode ICs. In contrast to conventional optical receivers, which are based on resistive-feedback transimpedance amplifiers (TIAs), the book uses charge integration on small photodiodes with a low capacitance known from image sensors to reduce the noise considerably -- even better sensitivity than with SPAD receivers is achieved. To obtain a much larger light sensitive area as in pixels of image sensors, innovative low-capacitance pin-finger and dot photodiodes are introduced. Important advantages of USPAR ICs are much lower circuit complexity, much smaller chip area and much lower power consumption as of SPAD receivers. In addition, error correction can be avoided. Detailed investigations of photodetectors and integrating amplifiers with many surprises and astonishing results of newest research will be described. Part of IPEM-IOP Series in Advances in Optics, Photonics and Optoelectronics.

Optics, optical sensors, and optical communication researchers, engineers, Ph.D. and master students at universities and those in industry and research labs.

Also available in print.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.

Dr. Horst Zimmermann is professor for Electronic Circuit Engineering at TU Wien, Vienna, Austria since 2000. His main interests are in design, characterization of analog and nanometer CMOS circuits, optoelectronic integrated CMOS and BiCMOS circuits, as well as optical wireless communication, in single-photon detection and in electronic-photonic integration. He is author and co-author of more than 600 publications. In 2002 he became Senior Member IEEE. He was primary guest editor of the Nov./Dec. 2014 issue of IEEE J. Selected Topics in Quantum Electronics on Optical Detectors: Technology and Applications.

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