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Creation and Accumulation of Radiation Defects in Single Crystals of Magnesium Oxide (Record no. 60527)

MARC details
000 -LEADER
fixed length control field 04136nam a22005295i 4500
001 - CONTROL NUMBER
control field 978-3-031-60207-8
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20251030112258.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 240604s2024 sz | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783031602078
-- 978-3-031-60207-8
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-031-60207-8
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TA401-492
072 #7 - SUBJECT CATEGORY CODE
Subject category code TGM
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC021000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TGM
Source thema
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Surzhikov, Anatoly.
Relator term author.
Relator code aut
-- http://id.loc.gov/vocabulary/relators/aut
9 (RLIN) 78277
245 10 - TITLE STATEMENT
Title Creation and Accumulation of Radiation Defects in Single Crystals of Magnesium Oxide
Medium [electronic resource] :
Remainder of title Research Aims and Methodology /
Statement of responsibility, etc. by Anatoly Surzhikov, Elena Lysenko.
250 ## - EDITION STATEMENT
Edition statement 1st ed. 2024.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Cham :
Name of producer, publisher, distributor, manufacturer Springer Nature Switzerland :
-- Imprint: Springer,
Date of production, publication, distribution, manufacture, or copyright notice 2024.
300 ## - PHYSICAL DESCRIPTION
Extent IX, 158 p. 79 illus.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Structure, Properties, Point Defects and Radiation Defect Formation in Magnesium Oxide Crystals -- 2. Objects and Methods of Research Used in the Study -- 3. Formation of Radiation Defects in MgO Crystals under High-Temperature Proton Irradiation -- 4. Stabilization of Frenkel Defects in Crystals of Magnesium Oxide at Impact Displacement of Ions -- 5. Creation of F+-Centers in Proton Tracks at Low Irradiation Temperatures -- 6. Accumulation of F-Type Color Centers in Crystals of Magnesium Oxide at High Excitation Densities Accelerated Electrons of Subthreshold Energy -- 7. Stabilization of Interstitial Oxygen Ions Formed under the Action of a High-Current Electron Beam in the Crystal Lattice of Magnesium Oxide -- 8. Experimental Study of Interstitial Oxygen Ions in Magnesium Oxide Crystals.
520 ## - SUMMARY, ETC.
Summary, etc. The range of problems that can be solved with the use of powerful radiation installations is determined: generation of nanosecond ultrahigh-frequency (microwave) pulses, collective acceleration of charged particles, the implementation of a controlled fusion reaction, and the creation of high-power lasers. In this edition, the questions posed for the SCM were solved using the example of single crystals of magnesium oxide. By the beginning of the authors' work, the structure of the color centers induced by radiation in magnesium oxide, the positions of the maxima of the optical absorption and luminescence bands, as well as the values of their half-widths and the temperature range of stability, were sufficiently established. There is practically no information about the location of internode ions in magnesium oxide crystals, and methods for their registration have not been worked out. These data are particularly important since the efficiency of the accumulation of radiation defects depends to a certain extent on the efficiency of fixing displaced of in the crystal lattice. However, all studies confirming this point of view were carried out using low and medium levels of arousal. The effect of high absorbed radiation energy capacities on the formation and accumulation of radiation defects in magnesium oxide crystals has not been practically studied.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
9 (RLIN) 71081
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
9 (RLIN) 70315
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
9 (RLIN) 71082
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lysenko, Elena.
Relator term author.
Relator code aut
-- http://id.loc.gov/vocabulary/relators/aut
9 (RLIN) 78278
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer Nature eBook
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783031602061
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783031602085
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783031602092
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1007/978-3-031-60207-8">https://doi.org/10.1007/978-3-031-60207-8</a>
912 ## -
-- ZDB-2-ENG
912 ## -
-- ZDB-2-SXE

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