Advanced Nanoscale MOSFET Architectures (Record no. 66868)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03574nam a22003974u 4500 |
| 001 - CONTROL NUMBER | |
| control field | 10.1002/9781394188970 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | Wiley |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20251030120303.0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr nn 008mam|a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 240528t2024||||xxu fs| |0|| 0|eng|| |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9781394188970 |
| Qualifying information | electronic |
| 024 7# - OTHER STANDARD IDENTIFIER | |
| Standard number or code | 10.1002/9781394188970 |
| Source of number or code | doi |
| 041 ## - LANGUAGE CODE | |
| Language code of text/sound track or separate title | eng |
| 245 00 - TITLE STATEMENT | |
| Title | Advanced Nanoscale MOSFET Architectures |
| Remainder of title | Current Trends and Future Perspectives |
| Medium | [electronic resource] |
| Statement of responsibility, etc. | Edited by Kalyan Biswas, Angsuman Sarkar. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 1 |
| 260 ## - Date publicare | |
| Name of publisher, distributor, etc. | Wiley |
| Date of publication, distribution, etc. | 2024 |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Name of producer, publisher, distributor, manufacturer | Wiley |
| Date of production, publication, distribution, manufacture, or copyright notice | 2024 |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 336pp.; |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 347 ## - DIGITAL FILE CHARACTERISTICS | |
| File type | text file |
| Source | rdaft |
| 347 ## - DIGITAL FILE CHARACTERISTICS | |
| Encoding format | |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | Comprehensive reference on the fundamental principles and basic physics dictating metal-oxide-semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal-oxide-semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon-germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study. |
| 650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| 9 (RLIN) | 91126 |
| 650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| 9 (RLIN) | 69883 |
| 650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| 9 (RLIN) | 91127 |
| 653 00 - INDEX TERM--UNCONTROLLED | |
| Uncontrolled term | nanoscale MOSFET; FinFET; graphene; GaN; TCAD; RF analog performance; semiconductors; High-k gate dielectrics; metal gate electrodes; multi-gate MOSFETs; gate stack processing; metal gate modification; heterostructure MOSFET |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Biswas, Kalyan |
| Relator code | edt |
| 9 (RLIN) | 91128 |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Sarkar, Angsuman |
| Relator code | edt |
| 9 (RLIN) | 40022 |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Printed edition: |
| International Standard Book Number | 9781394188949 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://doi.org/10.1002/9781394188970">https://doi.org/10.1002/9781394188970</a> |
| Host name | Wiley Online Library |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://onlinelibrary.wiley.com/action/showBook?doi=10.1002%2F9781394188970">https://onlinelibrary.wiley.com/action/showBook?doi=10.1002%2F9781394188970</a> |
| Host name | Wiley Online Library |
| 856 42 - ELECTRONIC LOCATION AND ACCESS | |
| Materials specified | Cover Image |
| Uniform Resource Identifier | <a href="https://onlinelibrary.wiley.com/cms/asset/602ee35e-dbc9-40e6-87bf-10a6b57f8e82/9781394188970.cover.gif">https://onlinelibrary.wiley.com/cms/asset/602ee35e-dbc9-40e6-87bf-10a6b57f8e82/9781394188970.cover.gif</a> |
| Host name | Wiley Online Library |
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