Welcome to the Library Catalog of "Dunarea de Jos" University of Galati

Nanoelectronics : (Record no. 68374)

MARC details
000 -LEADER
fixed length control field 08200nam a2200709 i 4500
001 - CONTROL NUMBER
control field 9780750348119
003 - CONTROL NUMBER IDENTIFIER
control field IOP
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20251030124214.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m eo d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cn |||m|||a
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 240104s2023 enka fob 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780750348119
Qualifying information ebook
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780750348102
Qualifying information mobi
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780750348096
Qualifying information print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780750348126
Qualifying information myPrint
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1088/978-0-7503-4811-9
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (CaBNVSL)thg00083717
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)1416752870
040 ## - CATALOGING SOURCE
Original cataloging agency CaBNVSL
Language of cataloging eng
Description conventions rda
Transcribing agency CaBNVSL
Modifying agency CaBNVSL
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7874.84
Item number P376 2023eb
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008000
Source bisacsh
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Parekh, Rutu,
Relator term author.
9 (RLIN) 96545
245 10 - TITLE STATEMENT
Title Nanoelectronics :
Remainder of title physics, technology and applications /
Statement of responsibility, etc. Rutu Parekh, Rasika Dhavse.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
Name of producer, publisher, distributor, manufacturer IOP Publishing,
Date of production, publication, distribution, manufacture, or copyright notice [2023]
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (various pagings) :
Other physical details illustrations (some color).
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term electronic
Source isbdmedia
338 ## - CARRIER TYPE
Carrier type term online resource
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement [IOP release $release]
490 1# - SERIES STATEMENT
Series statement IOP ebooks. [2023 collection]
500 ## - GENERAL NOTE
General note "Version: 20231101"--Title page verso.
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note 1. Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond -- 1.1. MOSFETs and their scaling -- 1.2. Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 2. Introduction and overview of nanoelectronics -- 2.1. Introduction -- 2.2. Market requirements for nanoelectronics -- 2.3. Nanofabrication
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 3. Introduction to the quantum theory of solids -- 3.1. Classical particles, classical waves and quantum particles -- 3.2. Quantum particles and principles of quantum mechanics -- 3.3. Quantum tunnelling -- 3.4. Quantum confinement -- 3.5. Schrodinger's wave equation--meaning, boundary conditions and applications -- 3.6. Significance of the band theory of solids -- 3.7. Factors affecting the energy band gap -- 3.8. Fermi statistics and electrical conduction in solids
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 4. Emerging research devices for nanocircuits -- 4.1. Channel-replacement devices -- 4.2. Graphene -- 4.3. Fullerenes and carbon nanotubes -- 4.4. Tunnel field-effect transistor -- 4.5. Nanowire field-effect transistors -- 4.6. P-type III-V channel-replacement devices -- 4.7. N-type Ge channel-replacement devices -- 4.8. Potential evaluation--extending MOSFETs to the end of the roadmap -- 4.9. Quantum confinement and associated devices -- 4.10. Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor -- 4.11. Structure and working principle of single-electron transistors -- 4.12. Other quantum structures and their applications -- 4.13. Nanoelectromechanical systems -- 4.14. Atomic switches -- 4.15. Mott FETs -- 4.16. Negative-capacitance FETs -- 4.17. Alternative information-processing devices
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 5. Emerging memory devices -- 5.1. Memristors -- 5.2. Magnetoresistive effect for memory applications -- 5.3. Magnetoresistive RAM -- 5.4. Spin-transfer torque magnetic random access memory -- 5.5. All-spin logic -- 5.6. Phase-change memory -- 5.7. Resistive random access memory -- 5.8. Ferroelectric RAM -- 5.9. Mott memory -- 5.10. Carbon-based emerging memory devices -- 5.11. Molecular memory -- 5.12. Macromolecular memory -- 5.13. Racetrack memory -- 5.14. Comparison of memory types
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 6. Modelling and simulation -- 6.1. Technology modelling and simulation -- 6.2. Circuit simulators -- 6.3. Monte Carlo simulation -- 6.4. Microelectromechanical/nanoelectromechanical device simulators -- 6.5. System-level design
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 7. Nanofabrication -- 7.1. Microfabrication techniques -- 7.2. Limits of photolithography and advanced lithographic processes -- 7.3. Self-assembly processes -- 7.4. Nano measurement and characterisation tools -- 7.5. Thin-film technology and synthesis -- 7.6. Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies -- 7.7. Process integration
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 8. Emerging nanoelectronic architectures -- 8.1. Storage class memory -- 8.2. Morphic computing : the architectures that can learn
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 9. Nanosensors and transducers -- 9.1. Introduction to sensors science and technology -- 9.2. Nanosensors and transducers in food industry, healthcare and defence -- 9.3. Metal nanoparticles and quantum-dots-based sensors -- 9.4. Carbon-nanotubes-based sensors -- 9.5. Electronic skin based on nanotechnology -- 9.6. Microelectromechanical/nanoelectromechanical sensors.
520 3# - SUMMARY, ETC.
Summary, etc. This course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics. After reading the book, students will be able to understand the applications and design principles of nanodevices and nanosensors. The content is organised into nine chapters, each covering a specific area and written in accessible language. The topics covered include physical and technological limitations of nano CMOS devices, quantum physics, simulation and modelling, nanofabrication, emerging logic and memory devices and application areas including nanoarchitectures, sensors, and transducers. The book is a core text for senior undergraduate and postgraduate courses in nanoelectronics, and a valuable reference for researchers, engineers and specialists in fields including electronic devices, solid-state physics and nanotechnology.
521 ## - TARGET AUDIENCE NOTE
Target audience note Core text for senior undergraduate and postgraduate courses in nanoelectronics. These courses are found in departments of electronics and electrical engineering, engineering physics and computer science, nanoscience and nanoengineering.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note Mode of access: World Wide Web.
538 ## - SYSTEM DETAILS NOTE
System details note System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.
545 ## - BIOGRAPHICAL OR HISTORICAL DATA
Biographical or historical data Dr. Rutu Parekh is an Associate Professor at DA-IICT, Gandhinagar, India. She received her M. Eng. in Electrical Engineering from Concordia University, Canada, and a PhD in Electrical Engineering (Nanoelectronics) from Universit�e de Sherbrooke, Canada. She was a postdoctoral fellow at Centre of Excellence in Nanoelectronics, IIT Bombay. She is also associated with The Inter-University Centre for Astronomy and Astrophysics, Pune, India, as a Visiting Associate. She holds more than 20 years of national and international experience in research and industry. She has published many articles in international journals and conference proceedings. Her research area includes high voltage ASIC design for space applications and design, modelling, and simulation of nanoelectronic circuits. Dr. Rasika Dhavse is an Associate Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology, Surat, India. She received her PhD in the field of nanocrystal-based flash memory devices in 2016. She has more than 25 years of academic experience. She has published many papers in international journals and conference proceedings, and is member of various reputed national and international professional bodies.
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note Title from PDF title page (viewed on January 4, 2024).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
9 (RLIN) 96546
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
Source of heading or term bicssc
9 (RLIN) 96547
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element
Source of heading or term bisacsh
9 (RLIN) 96548
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Dhavse, Rasika,
Relator term author.
9 (RLIN) 96549
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Institute of Physics (Great Britain),
Relator term publisher.
9 (RLIN) 17702
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 9780750348096
-- 9780750348126
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title IOP (Series).
Name of part/section of a work Release 23.
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title IOP ebooks.
Name of part/section of a work 2023 collection.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://iopscience.iop.org/book/mono/978-0-7503-4811-9">https://iopscience.iop.org/book/mono/978-0-7503-4811-9</a>
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type

No items available.

Biblioteca Universității "Dunărea de Jos" din Galați