Extreme-temperature and harsh-environment electronics : (Record no. 68388)
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| fixed length control field | 16936nam a2200949 i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9780750350723 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | IOP |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20251030124216.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m eo d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cn |||m|||a |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 230801s2023 enka fob 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9780750350723 |
| Qualifying information | ebook |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9780750350716 |
| Qualifying information | mobi |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9780750350709 |
| Qualifying information | |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9780750350730 |
| Qualifying information | myPrint |
| 024 7# - OTHER STANDARD IDENTIFIER | |
| Standard number or code | 10.1088/978-0-7503-5072-3 |
| Source of number or code | doi |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (CaBNVSL)thg00083638 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)1391997188 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | CaBNVSL |
| Language of cataloging | eng |
| Description conventions | rda |
| Transcribing agency | CaBNVSL |
| Modifying agency | CaBNVSL |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7870.25 |
| Item number | K534 2023eb |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TJFD |
| Source | bicssc |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TEC008000 |
| Source | bisacsh |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Khanna, Vinod Kumar, |
| Dates associated with a name | 1952- |
| Relator term | author. |
| 9 (RLIN) | 94039 |
| 245 10 - TITLE STATEMENT | |
| Title | Extreme-temperature and harsh-environment electronics : |
| Remainder of title | physics, technology and applications / |
| Statement of responsibility, etc. | Vinod Kumar Khanna. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | Second edition. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : |
| Name of producer, publisher, distributor, manufacturer | IOP Publishing, |
| Date of production, publication, distribution, manufacture, or copyright notice | [2023] |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (various pagings) : |
| Other physical details | illustrations (some color). |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | electronic |
| Source | isbdmedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Source | rdacarrier |
| 490 1# - SERIES STATEMENT | |
| Series statement | [IOP release $release] |
| 490 1# - SERIES STATEMENT | |
| Series statement | IOP ebooks. [2023 collection] |
| 500 ## - GENERAL NOTE | |
| General note | "Version: 20230701"--Title page verso. |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE | |
| Bibliography, etc | Includes bibliographical references. |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | part I. Environmental hazards and extreme-temperature electronics. Sub-part IA. Environmental hazards. 1. Introduction and overview -- 1.1. Reasons for moving away from normal practices in electronics -- 1.2. Organization of the book -- 1.3. Temperature effects -- 1.4. Harsh environment effects -- 1.5. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 2. Operating electronics beyond conventional limits -- 2.1. Life-threatening temperature imbalances on Earth and other planets -- 2.2. Temperature disproportions for electronics -- 2.3. High-temperature electronics -- 2.4. Low-temperature electronics -- 2.5. The scope of extreme-temperature and harsh-environment electronics -- 2.6. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | part I. Environmental hazards and extreme-temperature electronics. Sub-part IB. Extreme-temperature electronics. 3. Temperature effects on semiconductors -- 3.1. Introduction -- 3.2. The energy bandgap -- 3.3. Intrinsic carrier concentration -- 3.4. Carrier saturation velocity -- 3.5. Electrical conductivity of semiconductors -- 3.6. Free carrier concentration in semiconductors -- 3.7. Incomplete ionization and carrier freeze-out -- 3.8. Different ionization regimes -- 3.9. Mobilities of charge carriers in semiconductors -- 3.10. Equations for mobility variation with temperature -- 3.11. Mobility in MOSFET inversion layers at low temperatures -- 3.12. Carrier lifetime -- 3.13. Wider bandgap semiconductors than silicon -- 3.14. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits -- 4.1. Properties of silicon -- 4.2. Intrinsic temperature of silicon -- 4.3. Recapitulating single-crystal silicon wafer technology -- 4.4. Examining temperature effects on bipolar devices -- 4.5. Bipolar analog circuits in the 25 �C-300 �C range -- 4.6. Bipolar digital circuits in the 25 �C-340 �C range -- 4.7. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits -- 5.1. Introduction -- 5.2. Threshold voltage of an n-channel enhancement-mode MOSFET -- 5.3. On-resistance (RDS(ON)) of a double-diffused vertical MOSFET -- 5.4. Transconductance (gm) of a MOSFET -- 5.5. BVDSS and IDSS of a MOSFET -- 5.6. Zero temperature coefficient biasing point of MOSFET -- 5.7. Dynamic response of a MOSFET -- 5.8. MOS analog circuits in the 25 �C to 300 �C range -- 5.9. Digital CMOS circuits in -196 �C to 270 �C range -- 5.10. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 6. The influence of temperature on the performance of silicon-germanium heterojunction bipolar transistors -- 6.1. Introduction -- 6.2. HBT fabrication -- 6.3. Current gain and forward transit time of Si/Si1-xGex HBT -- 6.4. Comparison between Si BJT and Si/SiGe HBT -- 6.5. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 7. The temperature-sustaining capability of gallium arsenide electronics -- 7.1. Introduction -- 7.2. The intrinsic temperature of GaAs -- 7.3. Growth of single-crystal gallium arsenide -- 7.4. Doping of GaAs -- 7.5. Ohmic contacts to GaAs -- 7.6. Schottky contacts to GaAs -- 7.7. Commercial GaAs device evaluation in the 25 �C-400 �C temperature range -- 7.8. .Structural innovations for restricting the leakage current of GaAs MESFET up to 300 �C -- 7.9. Won et al threshold voltage model for a GaAs MESFET -- 7.10. The high-temperature electronic technique for enhancing the performance of MESFETs up to 300 �C -- 7.11. The operation of GaAs complementary heterojunction FETs from 25 �C to 500 �C -- 7.12. GaAs bipolar transistor operation up to 400 �C -- 7.13. A GaAs-based HBT for applications up to 350 �C -- 7.14. AlxGaAs1-x/GaAs HBT -- 7.15. GaAs x-ray and beta particle detectors -- 7.16. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 8. Silicon carbide electronics for hot environments -- 8.1. Impact of silicon carbide devices on power electronics and its superiority over silicon -- 8.2. Intrinsic temperature of silicon carbide -- 8.3. Silicon carbide single-crystal growth -- 8.4. Doping of silicon carbide -- 8.5. Surface oxidation of silicon dioxide -- 8.6. Schottky and ohmic contacts to silicon carbide -- 8.7. SiC p-n diodes -- 8.8. SiC Schottky barrier diodes -- 8.9. SiC JFETs -- 8.10. SiC bipolar junction transistors -- 8.11. SiC MOSFETs -- 8.12. SiC sensors -- 8.13. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 9. Gallium nitride electronics for very hot environments -- 9.1. Introduction -- 9.2. Intrinsic temperature of gallium nitride -- 9.3. Growth of the GaN epitaxial layer -- 9.4. Doping of GaN -- 9.5. Ohmic contacts to GaN -- 9.6. Schottky contacts to GaN -- 9.7. GaN MESFET model with hyperbolic tangent function -- 9.8. AlGaN/GaN HEMTs -- 9.9. InAlN/GaN HEMTs -- 9.10. GaN sensors -- 9.11. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 10. Diamond electronics for ultra-hot environments -- 10.1. Introduction -- 10.2. Intrinsic temperature of diamond -- 10.3. Synthesis of diamond -- 10.4. Doping of diamond -- 10.5. A diamond p-n junction diode -- 10.6. Diamond Schottky diode -- 10.7. Diamond bipolar junction transistor operating at < 200 �C -- 10.8. Diamond metal-semiconductor FET -- 10.9. Diamond JFET -- 10.10. Diamond MISFET -- 10.11. Diamond radiation detectors -- 10.12. Diamond quantum sensors -- 10.13. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 11. High-temperature passive components, interconnections and packaging -- 11.1. Introduction -- 11.2. High-temperature resistors -- 11.3. High-temperature capacitors -- 11.4. High-temperature magnetic cores and inductors -- 11.5. High-temperature metallization -- 11.6. High-temperature packaging -- 11.7. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 12. Superconductive electronics for ultra-cool environments -- 12.1. Introduction -- 12.2. Superconductivity basics -- 12.3. Josephson junction -- 12.4. Inverse AC Josephson effect : Shapiro steps -- 12.5. Superconducting quantum interference devices -- 12.6. Rapid single flux quantum logic -- 12.7. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 13. Superconductor-based microwave circuits operating at liquid-nitrogen temperatures -- 13.1 Introduction -- 13.2. Substrates for microwave circuits -- 13.3. HTS thin-film materials -- 13.4. Fabrication processes for HTS microwave circuits -- 13.5. Design and tuning approaches for HTS filters -- 13.6. Cryogenic packaging -- 13.7. HTS bandpass filters for mobile telecommunications -- 13.8. HTS JJ-based frequency down-converter -- 13.9. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 14. High-temperature superconductor-based power delivery -- 14.1. Introduction -- 14.2. Conventional electrical power transmission -- 14.3. HTS wires -- 14.4. HTS cable designs -- 14.5. HTS fault current limiters -- 14.6. HTS transformers -- 14.7. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | part II. Harsh-environment electronics. Sub-part IIA. General considerations. 15. Humidity and contamination effects on electronics -- 15.1. Introduction -- 15.2. Absolute and relative humidity -- 15.3. Relation between humidity, contamination and corrosion -- 15.4. Metals and alloys used in electronics -- 15.5. Humidity-triggered corrosion mechanisms -- 15.6. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 16. Moisture and waterproof electronics -- 16.1. Introduction -- 16.2. Corrosion prevention by design -- 16.3. Parylene coatings -- 16.4. Superhydrophobic coatings -- 16.5. Volatile corrosion inhibitor coatings -- 16.6. Silicones -- 16.7. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 17. Preventing chemical corrosion in electronics -- 17.1. Introduction -- 17.2. Sulfidic and oxidation corrosion from environmental gases -- 17.3. Electrolytic ion migration and galvanic coupling -- 17.4. Internal corrosion of integrated and printed circuit board circuits -- 17.5. Fretting corrosion -- 17.6. Tin whisker growth -- 17.7. Minimizing corrosion risks -- 17.8. Further protection methods -- 17.9. Hermetic packaging -- 17.10. Hermetic glass passivation of discrete high-voltage diodes, transistors and thyristors -- 17.11. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 18. Radiation effects on electronics -- 18.1. Introduction -- 18.2. Sources of radiation -- 18.4. Total dose effects -- 18.5. Single-event effects -- 18.6. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 19. Radiation-hardened electronics -- 19.1. The meaning of 'radiation hardening' -- 19.2. Radiation hardening by process (RHBP) -- 19.3. Radiation hardening by design -- 19.4. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 20. Vibration-tolerant electronics -- 20.1. Vibration is omnipresent -- 20.2. Random and sinusoidal vibrations -- 20.3. Countering vibration effects -- 20.4. Passive and active vibration isolators -- 20.5. Theory of passive vibration isolation -- 20.6. Mechanical spring vibration isolators -- 20.7. Air-spring vibration isolators -- 20.8. Wire-rope isolators -- 20.9. Elastomeric isolators -- 20.10. Negative stiffness isolators -- 20.11. Active vibration isolators -- 20.12. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | part II. Harsh-environment electronics. Sub-part IIB. Application-specific robust electronics techniques -- 21. Making electronics compatible with electromagnetic interference environments -- 21.1. Electromagnetic interference -- 21.2. Electromagnetic compatibility -- 21.3. Classification of EMI -- 21.4. Effects of EMI -- 21.5. Single-ended and differential transmission of signals -- 21.6. Differential- and common-mode voltages -- 21.7. Differential-mode interference -- 21.8. Common-mode interference -- 21.9. Twisted pair cable for common-mode EMI noise rejection -- 21.10. Common-mode interference from common impedance coupling -- 21.11. Combined EMI noise -- 21.12. Filters for EMI noise suppression -- 21.13. Grounding -- 21.14. Grounding approaches -- 21.15. EMI shielding -- 21.16. Grounding of shielded cables -- 21.17. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 22. Developing sensor capabilities for aggressive environments -- 22.1. Disorganized scenario in a harsh environment, and denial of accessibility to the sensor -- 22.2. High-temperature sensors -- 22.3. Need of tightly monitoring energy systems aggravates burden on sensors -- 22.4. Accelerometers -- 22.5. Flow sensors -- 22.6. Pressure sensors -- 22.7. Temperature sensors -- 22.8. Humidity sensors -- 22.9. Gas sensors -- 22.10. Discussions and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 23. Adapting medical implant electronics to human biological environments -- 23.1. Environment inside the human body -- 23.2. Essential properties of packaging materials for reliable functioning of implanted medical electronic devices -- 23.3. Studying biological response vis-�a-vis material properties -- 23.4. Foreign body reaction to implanted biomaterials -- 23.5. Biomaterials for implants -- 23.6. Metallic biomaterials -- 23.7. Ceramic biomaterials -- 23.8. Polymeric biomaterials -- 23.9. Composite biomaterials -- 23.10. Implantable microelectrode arrays for neuroprosthetics -- 23.11. Optrode array with integrated LEDs -- 23.12. Operation of an implanted electronics device enclosed in a soft polymer covering -- 23.13. Anti-foreign body reaction (FBR) techniques for domestication/mitigation of FBR to implants -- 23.14. Sensors working in biological environments -- 23.15. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 24. Meeting the challenges faced by electronics in unfavorable space environments -- 24.1. The challenge of vibrations and shocks -- 24.2. The challenge of temperature excursions beyond safe limits -- 24.3. The challenge of electrical charging of spacecraft -- 24.4. The challenge of tin whisker growth -- 24.5. The challenge of erosion of spacecraft materials by atomic oxygen -- 24.6. The challenge of radiation showers -- 24.7. The challenge of outgassing in vacuum environment of space -- 24.8. Discussion and conclusions |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 25. Electronics jamming counteraction and cybersecurity assurance in adversary environments -- 25.1. A jamming attack -- 25.2. Types of jamming and jammers -- 25.3. Detection of jamming attacks -- 25.4. Mapping out jammed area and planning the defense strategy against jamming -- 25.5. Approaches to overcome jamming -- 25.6. Retreating methods -- 25.7. Competition method : regulation of transmitted power and error correcting code -- 25.8. Jamming-resistant spread-spectrum communication systems -- 25.9. Ethical hacking -- 25.10. Malware (malicious software) -- 25.11. Hacking threats and attacks -- 25.12. Defences against hacking -- 25.13. Discussion and conclusions. |
| 520 3# - SUMMARY, ETC. | |
| Summary, etc. | Electronic devices and circuits are employed by a range of industries in unfriendly conditions, such as exposure to extreme temperatures, humidity, or radiation. This second edition describes the diverse measures needed to make electronics capable of coping with such situations and exploiting any new phenomena that take place under these specific conditions. The book explains the need for operating electronics beyond conventional limits in applications such as aerospace and automotive engineering. It explores GaAs, SiC, GaN and diamond electronics, superconductive electronics, superconductor-based power delivery; moisture-proof, chemical-corrosion-resistant, radiation hardened and vibration-tolerant electronics; it also covers the prevention of electromagnetic interference, the operation of sensors in hostile conditions, and jamming and hacking mitigation techniques. The book provides up-to-date coverage of the topics for students, academics and industrial researchers as well as professional experts. |
| 521 ## - TARGET AUDIENCE NOTE | |
| Target audience note | Researchers, postgraduate students and practising engineers working with electronic devices and circuits under extreme temperatures and harsh-environments, including the automotive, avionics, oil and nuclear power industries. |
| 530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE | |
| Additional physical form available note | Also available in print. |
| 538 ## - SYSTEM DETAILS NOTE | |
| System details note | Mode of access: World Wide Web. |
| 538 ## - SYSTEM DETAILS NOTE | |
| System details note | System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader. |
| 545 ## - BIOGRAPHICAL OR HISTORICAL DATA | |
| Biographical or historical data | Dr. Vinod Kumar Khanna is an independent researcher at Chandigarh, India. He is a former emeritus scientist at the Council of Scientific & Industrial Research (CSIR) and emeritus professor at the Academy of Scientific & Innovative Research (AcSIR), India. He is a retired chief scientist, Head of MEMS & Microsensors Group and Professor of AcSIR at the CSIR-Central Electronics Engineering Research Institute, Pilani, India. He has authored 19 books and six chapters in edited books, published 194 research papers in prestigious research journals and conference proceedings, and has five patents to his credit. |
| 588 0# - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Title from PDF title page (viewed on August 1, 2023). |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| General subdivision | Reliability. |
| 9 (RLIN) | 96605 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
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| 9 (RLIN) | 96606 |
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| 9 (RLIN) | 96607 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| General subdivision | Thermal properties. |
| 9 (RLIN) | 96608 |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| 9 (RLIN) | 96609 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| Source of heading or term | bicssc |
| 9 (RLIN) | 96547 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | |
| Source of heading or term | bisacsh |
| 9 (RLIN) | 96548 |
| 710 2# - ADDED ENTRY--CORPORATE NAME | |
| Corporate name or jurisdiction name as entry element | Institute of Physics (Great Britain), |
| Relator term | publisher. |
| 9 (RLIN) | 17702 |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| International Standard Book Number | 9780750350709 |
| -- | 9780750350730 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | IOP (Series). |
| Name of part/section of a work | Release 23. |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | IOP ebooks. |
| Name of part/section of a work | 2023 collection. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://iopscience.iop.org/book/mono/978-0-7503-5072-3">https://iopscience.iop.org/book/mono/978-0-7503-5072-3</a> |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
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