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  <titleInfo>
    <title>Semiconductor Devices</title>
    <subTitle>Diodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers</subTitle>
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    <namePart>Banerjee, Amal.</namePart>
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    <dateIssued encoding="marc">2024</dateIssued>
    <edition>1st ed. 2024.</edition>
    <issuance>monographic</issuance>
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  <language>
    <languageTerm authority="iso639-2b" type="code">eng</languageTerm>
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    <extent>XV, 299 p. 87 illus., 32 illus. in color. online resource.</extent>
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  <abstract>This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device. Examines how a semiconductor device is designed and fabricated to satisfy the requirements of the target application Explains use of standard laboratory equipment to extract key performance characteristics of semiconductor devices Includes examples of TCAD tools fordesign of internal electrical properties of a new semiconductor device.</abstract>
  <tableOfContents>Fundamental Quantum and Statistical Mechanics of Crystalline Solids -- Charge Transport(Current Flow) in Semiconductors -- Homogeneous(np/pn) and Heterogeneous(Np) Semiconductor Junction Fundamentals -- Basic Heterogeneous Bipolar/Bijunction Transistor(HBT) Properties -- Advanced VBIC and Angelov-Chalmers Models for Homogeneous/Heterogeneous Bipolar/Bijunction Transistor -- Heterogeneous Junction Field Effect Devices – Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor(HEMT) -- AlGaAs-GaAs, AlGaN-GaN, SiC HEMT Large Signal Model Equivalent Electrical Circuits(Angelov Chalmers Model) – Normally On/Off HEMT, pHEMT, mHEMT and MODFET -- Homogeneous Junction Bipolar/Bijunction Transistor -- Metal Oxide Semiconductor Field Effect Transistor -- Noise in Semiconductor Devices -- Semiconductor Device Manufacturing Technologies -- Designing Transistors for Specific Applications -- Performance Characteristics of Selected Commercial Transistors and Technology Computer Aided Design(TCAD) Tools -- Semiconductor Optoelectronic Devices -- Gallium Nitride - Reigning King of Ultra High Frequency/Power Transistors.</tableOfContents>
  <note type="statement of responsibility">by Amal Banerjee.</note>
  <subject authority="lcsh">
    <topic>Electronic circuits</topic>
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  <subject authority="lcsh">
    <topic>Embedded computer systems</topic>
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  <subject authority="lcsh">
    <topic>Solid state physics</topic>
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  <subject>
    <topic>Electronic Circuits and Systems</topic>
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  <subject>
    <topic>Embedded Systems</topic>
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  <subject>
    <topic>Electronic Devices</topic>
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  <classification authority="lcc">TK7867-7867.5</classification>
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      <title>Synthesis Lectures on Engineering, Science, and Technology</title>
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  <identifier type="isbn">9783031457500</identifier>
  <identifier type="uri">https://doi.org/10.1007/978-3-031-45750-0</identifier>
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