04032nam a22004815i 4500001001800000003000900018005001700027007001500044008004100059020003700100024003500137050001800172072001700190072002300207072001600230100008400246245015300330250001800483264006900501300006400570336002600634337002600660338003600686347002400722490007500746505117500821520104801996650002503044650003803069650003203107650003703139650002203176650003103198710003403229773002603263776003603289776003603325776003603361830007503397856004603472912001503518999001703533978-3-031-45750-0DE-He21320251030110823.0cr nn 008mamaa231016s2024    sz |    s    |||| 0|eng d  a97830314575009978-3-031-45750-07 a10.1007/978-3-031-45750-02doi 4aTK7867-7867.5 7aTJFC2bicssc 7aTEC0080102bisacsh 7aTJFC2thema1 aBanerjee, Amal.eauthor.4aut4http://id.loc.gov/vocabulary/relators/aut96657910aSemiconductor Devicesh[electronic resource] :bDiodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers /cby Amal Banerjee.  a1st ed. 2024. 1aCham :bSpringer Nature Switzerland :bImprint: Springer,c2024.  aXV, 299 p. 87 illus., 32 illus. in color.bonline resource.  atextbtxt2rdacontent  acomputerbc2rdamedia  aonline resourcebcr2rdacarrier  atext filebPDF2rda1 aSynthesis Lectures on Engineering, Science, and Technology,x2690-03270 aFundamental Quantum and Statistical Mechanics of Crystalline Solids -- Charge Transport(Current Flow) in Semiconductors -- Homogeneous(np/pn) and Heterogeneous(Np) Semiconductor Junction Fundamentals -- Basic Heterogeneous Bipolar/Bijunction Transistor(HBT) Properties -- Advanced VBIC and Angelov-Chalmers Models for Homogeneous/Heterogeneous Bipolar/Bijunction Transistor -- Heterogeneous Junction Field Effect Devices – Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor(HEMT) -- AlGaAs-GaAs, AlGaN-GaN, SiC HEMT Large Signal Model Equivalent Electrical Circuits(Angelov Chalmers Model) – Normally On/Off HEMT, pHEMT, mHEMT and MODFET -- Homogeneous Junction Bipolar/Bijunction Transistor -- Metal Oxide Semiconductor Field Effect Transistor -- Noise in Semiconductor Devices -- Semiconductor Device Manufacturing Technologies -- Designing Transistors for Specific Applications -- Performance Characteristics of Selected Commercial Transistors and Technology Computer Aided Design(TCAD) Tools -- Semiconductor Optoelectronic Devices -- Gallium Nitride - Reigning King of Ultra High Frequency/Power Transistors.  aThis book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device. Examines how a semiconductor device is designed and fabricated to satisfy the requirements of the target application Explains use of standard laboratory equipment to extract key performance characteristics of semiconductor devices Includes examples of TCAD tools fordesign of internal electrical properties of a new semiconductor device. 0aElectronic circuits. 0aEmbedded computer systems.964625 0aSolid state physics.96658014aElectronic Circuits and Systems.24aEmbedded Systems.24aElectronic Devices.9665812 aSpringerLink (Online service)0 tSpringer Nature eBook08iPrinted edition:z978303145749408iPrinted edition:z978303145751708iPrinted edition:z9783031457524 0aSynthesis Lectures on Engineering, Science, and Technology,x2690-032740uhttps://doi.org/10.1007/978-3-031-45750-0  aZDB-2-SXSC  c56406d56406