03635nam a22005055i 4500001001800000003000900018005001700027007001500044008004100059020001800100024003500118050001800153072001800171072002300189072001600212100008000228245010000308250001800408264006900426300006400495336002600559337002600585338003600611347002400647490007500671505025000746520158800996650002002584650002202604650001202626650002502638650003702663650002002700650003002720650002302750650004202773650002502815710003402840773002602874776003602900776003602936776003602972830007503008856004603083978-3-031-59064-1DE-He21320251030112312.0cr nn 008mamaa240614s2024    sz |    s    |||| 0|eng d  a97830315906417 a10.1007/978-3-031-59064-12doi 4aQC610.9-611.8 7aTJFD52bicssc 7aSCI0770002bisacsh 7aTJFD2thema1 aMönch, Winfried.eauthor.4aut4http://id.loc.gov/vocabulary/relators/aut10aElectronic Structure of Semiconductor Interfacesh[electronic resource] /cby Winfried Mönch.  a1st ed. 2024. 1aCham :bSpringer Nature Switzerland :bImprint: Springer,c2024.  aX, 150 p. 123 illus., 65 illus. in color.bonline resource.  atextbtxt2rdacontent  acomputerbc2rdamedia  aonline resourcebcr2rdacarrier  atext filebPDF2rda1 aSynthesis Lectures on Engineering, Science, and Technology,x2690-03270 aIntroduction -- Experimental Data Base -- From the Schottky-Mott Rule to Interface-Induced Gap States -- Interface-Induced Gap States -- Comparison of Theoretical and Experimental Data -- Irradiation- or Defect-Induced Gap States -- Conclusions.  aThis concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures Includes experimental Schottky barrier heights, slope parameters, and valence-band offsets for a range of semiconductors Compares theoretical and experimental barrier heights of Schottky contacts and valence-band offsets of heterostructures. 0aSemiconductors. 0aCondensed matter. 0aMetals. 0aMaterialsxAnalysis. 0aValence (Theoretical chemistry).14aSemiconductors.24aCondensed Matter Physics.24aMetals and Alloys.24aMaterials Characterization Technique.24aValence-Bond Theory.2 aSpringerLink (Online service)0 tSpringer Nature eBook08iPrinted edition:z978303159063408iPrinted edition:z978303159065808iPrinted edition:z9783031590665 0aSynthesis Lectures on Engineering, Science, and Technology,x2690-032740uhttps://doi.org/10.1007/978-3-031-59064-1