03916nam a22005655i 4500 978-3-031-59064-1 DE-He213 20251030112312.0 cr nn 008mamaa 240614s2024 sz | s |||| 0|eng d 9783031590641 978-3-031-59064-1 10.1007/978-3-031-59064-1 doi QC610.9-611.8 TJFD5 bicssc SCI077000 bisacsh TJFD thema Mönch, Winfried. author. aut http://id.loc.gov/vocabulary/relators/aut 78700 Electronic Structure of Semiconductor Interfaces [electronic resource] / by Winfried Mönch. 1st ed. 2024. Cham : Springer Nature Switzerland : Imprint: Springer, 2024. X, 150 p. 123 illus., 65 illus. in color. online resource. text txt rdacontent computer c rdamedia online resource cr rdacarrier text file PDF rda Synthesis Lectures on Engineering, Science, and Technology, 2690-0327 Introduction -- Experimental Data Base -- From the Schottky-Mott Rule to Interface-Induced Gap States -- Interface-Induced Gap States -- Comparison of Theoretical and Experimental Data -- Irradiation- or Defect-Induced Gap States -- Conclusions. This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures Includes experimental Schottky barrier heights, slope parameters, and valence-band offsets for a range of semiconductors Compares theoretical and experimental barrier heights of Schottky contacts and valence-band offsets of heterostructures. Semiconductors. 69883 Condensed matter. 66773 Metals. Materials Analysis. Valence (Theoretical chemistry). 78701 Semiconductors. 69883 Condensed Matter Physics. 71872 Metals and Alloys. Materials Characterization Technique. Valence-Bond Theory. 78702 SpringerLink (Online service) Springer Nature eBook Printed edition: 9783031590634 Printed edition: 9783031590658 Printed edition: 9783031590665 Synthesis Lectures on Engineering, Science, and Technology, 2690-0327 https://doi.org/10.1007/978-3-031-59064-1 ZDB-2-SXSC 60731 60731