03681nam a22005295i 4500001001800000003000900018005001700027007001500044008004100059020003700100024003500137050001800172072001700190072002300207072001600230245015000246250001800396264007200414300006600486336002600552337002600578338003600604347002400640490007400664505094400738520061501682650002502297650002802322650002702350650001502377650003702392650002902429650002702458700015202485700008902637700008502726710003402811773002602845776003602871776003602907776003602943830008102979856004603060912001403106912001403120999001703134978-981-97-4623-1DE-He21320251030112936.0cr nn 008mamaa240903s2024    si |    s    |||| 0|eng d  a97898197462319978-981-97-4623-17 a10.1007/978-981-97-4623-12doi 4aTK7867-7867.5 7aTJFC2bicssc 7aTEC0080102bisacsh 7aTJFC2thema10aBeyond Si-Based CMOS Devicesh[electronic resource] :bMaterials to Architecture /cedited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan.  a1st ed. 2024. 1aSingapore :bSpringer Nature Singapore :bImprint: Springer,c2024.  aXIV, 326 p. 100 illus., 82 illus. in color.bonline resource.  atextbtxt2rdacontent  acomputerbc2rdamedia  aonline resourcebcr2rdacarrier  atext filebPDF2rda1 aSpringer Tracts in Electrical and Electronics Engineering,x2731-42190 a Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.  aThis book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices. 0aElectronic circuits. 0aMicroprocessors.959300 0aComputer architecture. 0aMaterials.14aElectronic Circuits and Systems.24aProcessor Architectures.24aMaterials for Devices.1 aSingh, Sangeeta.eeditor.0(orcid)0000-0002-1185-05401https://orcid.org/0000-0002-1185-05404edt4http://id.loc.gov/vocabulary/relators/edt9836721 aSharma, Shashi Kant.eeditor.4edt4http://id.loc.gov/vocabulary/relators/edt9836731 aNandan, Durgesh.eeditor.4edt4http://id.loc.gov/vocabulary/relators/edt9836742 aSpringerLink (Online service)0 tSpringer Nature eBook08iPrinted edition:z978981974622408iPrinted edition:z978981974624808iPrinted edition:z9789819746255 0aSpringer Tracts in Electrical and Electronics Engineering,x2731-421996610640uhttps://doi.org/10.1007/978-981-97-4623-1  aZDB-2-ENG  aZDB-2-SXE  c63089d63089