03528nam a22003854u 450000100220000000300060002200500170002800700150004500800410006002000300010102400310013104100080016224501500017025000060032026000160032626400160034230000120035833600260037033700260039633800360042234700210045834700080047952019050048765000340239265000260242665000360245265302290248870000310271770000330274877600360278185600640281785601020288185601420298399900170312510.1002/9781394188970Wiley20251030120303.0cr nn 008mam|a240528t2024||||xxu    fs|   |0|| 0|eng||  a9781394188970qelectronic7 a10.1002/97813941889702doi  aeng00aAdvanced Nanoscale MOSFET ArchitecturesbCurrent Trends and Future Perspectivesh[electronic resource]cEdited by Kalyan Biswas, Angsuman Sarkar.  a1  bWileyc2024 1bWileyc2024  a336pp.;  atextbtxt2rdacontent  acomputerbc2rdamedia  aonline resourcebcr2rdacarrier  atext file2rdaft  bPDF  aComprehensive reference on the fundamental principles and basic physics dictating metal-oxide-semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal-oxide-semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon-germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study. 4aNanotechnology General991126 4aSemiconductors969883 4aMEMS and Nanoelectronics99112700ananoscale MOSFET; FinFET; graphene; GaN; TCAD; RF analog performance; semiconductors; High-k gate dielectrics; metal gate electrodes; multi-gate MOSFETs; gate stack processing; metal gate modification; heterostructure MOSFET1 aBiswas, Kalyan4edt9911281 aSarkar, Angsuman4edt94002208iPrinted edition:z978139418894940uhttps://doi.org/10.1002/9781394188970aWiley Online Library40uhttps://onlinelibrary.wiley.com/action/showBook?doi=10.1002%2F9781394188970aWiley Online Library423Cover Imageuhttps://onlinelibrary.wiley.com/cms/asset/602ee35e-dbc9-40e6-87bf-10a6b57f8e82/9781394188970.cover.gifaWiley Online Library  c66868d66868