Negative capacitance field effect transistors : physics, design, modeling and applications / edited by Young Suh Song, Shubham Tayal, Shiromani Balmukund Rahi, and Abhishek Kumar Upadhyay. - 1 online resource. - Materials, devices, and circuits .

Chapter 1. Recent challenges in IT and semiconductor Industry : from Von Neumann architecture to the future / Young Suh Song, Shiromani Balmukund Rahi, Navjeet Bagga, Sunil Rathore, Rajeewa Kumar Jaisawal, P. Vimala, Neha Paras, K. Srinivasa Rao -- Chapter 2. Technical demands of low-power electronics / Soha Maqbool Bhat, Pooran Singh, Ramakant Yadav, Shiromani Balmukund Rahi, Billel Smaani, Abhishek Kumar Upadhyay, Young Suh Song -- Chapter 3. Negative capacitance Field Effect Transistors : Concept and Technology / Ball Mukund Mani Tripathi

"This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign"--

9781003373391 1003373399 9781000933338 1000933334 9781000933321 1000933326

10.1201/9781003373391 doi






TK7871.95 / .N44 2024