Feng, Zhe Chuan editor. text bibliography flu 2023 2023 First edition. monographic eng 1 online resource (xix, 444 pages) : illustrations. "This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs"-- edited by Zhe Chuan Feng. Electronics Materials Silicon carbide Electric properties Semiconductor films Epitaxy SCIENCE / Physics TECHNOLOGY / Material Science TK7871.15.S56 H36 2023 9780429198540 042919854X 9780429579837 0429579837 9780429583957 0429583958 9780429582059 0429582056 https://www.taylorfrancis.com/books/9780429198540 http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf https://www.taylorfrancis.com/books/9780429198540 http://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf OCoLC-P 220723 20251030122307.0 9780429198540 eng