08033nam a2200661 i 45000010014000000030004000140050017000180060019000350070015000540080041000690200025001100200024001350200025001590200027001840240035002110350025002460350022002710400040002930500027003330720017003600720023003771000027004002450091004272640098005183000071006163360021006873370026007083380032007344900027007664900034007935000043008275040041008705050252009115050145011635050476013085050835017845050495026195050233031145050391033475050135037385050375038735201041042485210241052895300029055305380036055595380078055955451255056735880059069286500021069876500044070086500063070527000029071157100054071447760049071988300031072478300034072788560059073129780750348119IOP20251030124214.0m    eo  d        cr cn |||m|||a240104s2023    enka   fob    000 0 eng d  a9780750348119qebook  a9780750348102qmobi  z9780750348096qprint  z9780750348126qmyPrint7 a10.1088/978-0-7503-4811-92doi  a(CaBNVSL)thg00083717  a(OCoLC)1416752870  aCaBNVSLbengerdacCaBNVSLdCaBNVSL 4aTK7874.84bP376 2023eb 7aTJFD2bicssc 7aTEC0080002bisacsh1 aParekh, Rutu,eauthor.10aNanoelectronics :bphysics, technology and applications /cRutu Parekh, Rasika Dhavse. 1aBristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :bIOP Publishing,c[2023]  a1 online resource (various pagings) :billustrations (some color).  atext2rdacontent  aelectronic2isbdmedia  aonline resource2rdacarrier1 a[IOP release $release]1 aIOP ebooks. [2023 collection]  a"Version: 20231101"--Title page verso.  aIncludes bibliographical references.0 a1. Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond -- 1.1. MOSFETs and their scaling -- 1.2. Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation8 a2. Introduction and overview of nanoelectronics -- 2.1. Introduction -- 2.2. Market requirements for nanoelectronics -- 2.3. Nanofabrication8 a3. Introduction to the quantum theory of solids -- 3.1. Classical particles, classical waves and quantum particles -- 3.2. Quantum particles and principles of quantum mechanics -- 3.3. Quantum tunnelling -- 3.4. Quantum confinement -- 3.5. Schrodinger's wave equation--meaning, boundary conditions and applications -- 3.6. Significance of the band theory of solids -- 3.7. Factors affecting the energy band gap -- 3.8. Fermi statistics and electrical conduction in solids8 a4. Emerging research devices for nanocircuits -- 4.1. Channel-replacement devices -- 4.2. Graphene -- 4.3. Fullerenes and carbon nanotubes -- 4.4. Tunnel field-effect transistor -- 4.5. Nanowire field-effect transistors -- 4.6. P-type III-V channel-replacement devices -- 4.7. N-type Ge channel-replacement devices -- 4.8. Potential evaluation--extending MOSFETs to the end of the roadmap -- 4.9. Quantum confinement and associated devices -- 4.10. Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor -- 4.11. Structure and working principle of single-electron transistors -- 4.12. Other quantum structures and their applications -- 4.13. Nanoelectromechanical systems -- 4.14. Atomic switches -- 4.15. Mott FETs -- 4.16. Negative-capacitance FETs -- 4.17. Alternative information-processing devices8 a5. Emerging memory devices -- 5.1. Memristors -- 5.2. Magnetoresistive effect for memory applications -- 5.3. Magnetoresistive RAM -- 5.4. Spin-transfer torque magnetic random access memory -- 5.5. All-spin logic -- 5.6. Phase-change memory -- 5.7. Resistive random access memory -- 5.8. Ferroelectric RAM -- 5.9. Mott memory -- 5.10. Carbon-based emerging memory devices -- 5.11. Molecular memory -- 5.12. Macromolecular memory -- 5.13. Racetrack memory -- 5.14. Comparison of memory types8 a6. Modelling and simulation -- 6.1. Technology modelling and simulation -- 6.2. Circuit simulators -- 6.3. Monte Carlo simulation -- 6.4. Microelectromechanical/nanoelectromechanical device simulators -- 6.5. System-level design8 a7. Nanofabrication -- 7.1. Microfabrication techniques -- 7.2. Limits of photolithography and advanced lithographic processes -- 7.3. Self-assembly processes -- 7.4. Nano measurement and characterisation tools -- 7.5. Thin-film technology and synthesis -- 7.6. Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies -- 7.7. Process integration8 a8. Emerging nanoelectronic architectures -- 8.1. Storage class memory -- 8.2. Morphic computing : the architectures that can learn8 a9. Nanosensors and transducers -- 9.1. Introduction to sensors science and technology -- 9.2. Nanosensors and transducers in food industry, healthcare and defence -- 9.3. Metal nanoparticles and quantum-dots-based sensors -- 9.4. Carbon-nanotubes-based sensors -- 9.5. Electronic skin based on nanotechnology -- 9.6. Microelectromechanical/nanoelectromechanical sensors.3 aThis course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics. After reading the book, students will be able to understand the applications and design principles of nanodevices and nanosensors. The content is organised into nine chapters, each covering a specific area and written in accessible language. The topics covered include physical and technological limitations of nano CMOS devices, quantum physics, simulation and modelling, nanofabrication, emerging logic and memory devices and application areas including nanoarchitectures, sensors, and transducers. The book is a core text for senior undergraduate and postgraduate courses in nanoelectronics, and a valuable reference for researchers, engineers and specialists in fields including electronic devices, solid-state physics and nanotechnology.  aCore text for senior undergraduate and postgraduate courses in nanoelectronics. These courses are found in departments of electronics and electrical engineering, engineering physics and computer science, nanoscience and nanoengineering.  aAlso available in print.  aMode of access: World Wide Web.  aSystem requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.  aDr. Rutu Parekh is an Associate Professor at DA-IICT, Gandhinagar, India. She received her M. Eng. in Electrical Engineering from Concordia University, Canada, and a PhD in Electrical Engineering (Nanoelectronics) from Universit�e de Sherbrooke, Canada. She was a postdoctoral fellow at Centre of Excellence in Nanoelectronics, IIT Bombay. She is also associated with The Inter-University Centre for Astronomy and Astrophysics, Pune, India, as a Visiting Associate. She holds more than 20 years of national and international experience in research and industry. She has published many articles in international journals and conference proceedings. Her research area includes high voltage ASIC design for space applications and design, modelling, and simulation of nanoelectronic circuits. Dr. Rasika Dhavse is an Associate Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology, Surat, India. She received her PhD in the field of nanocrystal-based flash memory devices in 2016. She has more than 25 years of academic experience. She has published many papers in international journals and conference proceedings, and is member of various reputed national and international professional bodies.0 aTitle from PDF title page (viewed on January 4, 2024). 0aNanoelectronics. 7aElectronic devices & materials.2bicssc 7aTECHNOLOGY & ENGINEERING / Electronics / General.2bisacsh1 aDhavse, Rasika,eauthor.2 aInstitute of Physics (Great Britain),epublisher.08iPrint version:z9780750348096z9780750348126 0aIOP (Series).pRelease 23. 0aIOP ebooks.p2023 collection.40uhttps://iopscience.iop.org/book/mono/978-0-7503-4811-9