08200nam a2200709 i 4500 9780750348119 IOP 20251030124214.0 m eo d cr cn |||m|||a 240104s2023 enka fob 000 0 eng d 9780750348119 ebook 9780750348102 mobi 9780750348096 print 9780750348126 myPrint 10.1088/978-0-7503-4811-9 doi (CaBNVSL)thg00083717 (OCoLC)1416752870 CaBNVSL eng rda CaBNVSL CaBNVSL TK7874.84 P376 2023eb TJFD bicssc TEC008000 bisacsh Parekh, Rutu, author. 96545 Nanoelectronics : physics, technology and applications / Rutu Parekh, Rasika Dhavse. Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2023] 1 online resource (various pagings) : illustrations (some color). text rdacontent electronic isbdmedia online resource rdacarrier [IOP release $release] IOP ebooks. [2023 collection] "Version: 20231101"--Title page verso. Includes bibliographical references. 1. Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond -- 1.1. MOSFETs and their scaling -- 1.2. Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation 2. Introduction and overview of nanoelectronics -- 2.1. Introduction -- 2.2. Market requirements for nanoelectronics -- 2.3. Nanofabrication 3. Introduction to the quantum theory of solids -- 3.1. Classical particles, classical waves and quantum particles -- 3.2. Quantum particles and principles of quantum mechanics -- 3.3. Quantum tunnelling -- 3.4. Quantum confinement -- 3.5. Schrodinger's wave equation--meaning, boundary conditions and applications -- 3.6. Significance of the band theory of solids -- 3.7. Factors affecting the energy band gap -- 3.8. Fermi statistics and electrical conduction in solids 4. Emerging research devices for nanocircuits -- 4.1. Channel-replacement devices -- 4.2. Graphene -- 4.3. Fullerenes and carbon nanotubes -- 4.4. Tunnel field-effect transistor -- 4.5. Nanowire field-effect transistors -- 4.6. P-type III-V channel-replacement devices -- 4.7. N-type Ge channel-replacement devices -- 4.8. Potential evaluation--extending MOSFETs to the end of the roadmap -- 4.9. Quantum confinement and associated devices -- 4.10. Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor -- 4.11. Structure and working principle of single-electron transistors -- 4.12. Other quantum structures and their applications -- 4.13. Nanoelectromechanical systems -- 4.14. Atomic switches -- 4.15. Mott FETs -- 4.16. Negative-capacitance FETs -- 4.17. Alternative information-processing devices 5. Emerging memory devices -- 5.1. Memristors -- 5.2. Magnetoresistive effect for memory applications -- 5.3. Magnetoresistive RAM -- 5.4. Spin-transfer torque magnetic random access memory -- 5.5. All-spin logic -- 5.6. Phase-change memory -- 5.7. Resistive random access memory -- 5.8. Ferroelectric RAM -- 5.9. Mott memory -- 5.10. Carbon-based emerging memory devices -- 5.11. Molecular memory -- 5.12. Macromolecular memory -- 5.13. Racetrack memory -- 5.14. Comparison of memory types 6. Modelling and simulation -- 6.1. Technology modelling and simulation -- 6.2. Circuit simulators -- 6.3. Monte Carlo simulation -- 6.4. Microelectromechanical/nanoelectromechanical device simulators -- 6.5. System-level design 7. Nanofabrication -- 7.1. Microfabrication techniques -- 7.2. Limits of photolithography and advanced lithographic processes -- 7.3. Self-assembly processes -- 7.4. Nano measurement and characterisation tools -- 7.5. Thin-film technology and synthesis -- 7.6. Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies -- 7.7. Process integration 8. Emerging nanoelectronic architectures -- 8.1. Storage class memory -- 8.2. Morphic computing : the architectures that can learn 9. Nanosensors and transducers -- 9.1. Introduction to sensors science and technology -- 9.2. Nanosensors and transducers in food industry, healthcare and defence -- 9.3. Metal nanoparticles and quantum-dots-based sensors -- 9.4. Carbon-nanotubes-based sensors -- 9.5. Electronic skin based on nanotechnology -- 9.6. Microelectromechanical/nanoelectromechanical sensors. This course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics. After reading the book, students will be able to understand the applications and design principles of nanodevices and nanosensors. The content is organised into nine chapters, each covering a specific area and written in accessible language. The topics covered include physical and technological limitations of nano CMOS devices, quantum physics, simulation and modelling, nanofabrication, emerging logic and memory devices and application areas including nanoarchitectures, sensors, and transducers. The book is a core text for senior undergraduate and postgraduate courses in nanoelectronics, and a valuable reference for researchers, engineers and specialists in fields including electronic devices, solid-state physics and nanotechnology. Core text for senior undergraduate and postgraduate courses in nanoelectronics. These courses are found in departments of electronics and electrical engineering, engineering physics and computer science, nanoscience and nanoengineering. Also available in print. Mode of access: World Wide Web. System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader. Dr. Rutu Parekh is an Associate Professor at DA-IICT, Gandhinagar, India. She received her M. Eng. in Electrical Engineering from Concordia University, Canada, and a PhD in Electrical Engineering (Nanoelectronics) from Universit�e de Sherbrooke, Canada. She was a postdoctoral fellow at Centre of Excellence in Nanoelectronics, IIT Bombay. She is also associated with The Inter-University Centre for Astronomy and Astrophysics, Pune, India, as a Visiting Associate. She holds more than 20 years of national and international experience in research and industry. She has published many articles in international journals and conference proceedings. Her research area includes high voltage ASIC design for space applications and design, modelling, and simulation of nanoelectronic circuits. Dr. Rasika Dhavse is an Associate Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology, Surat, India. She received her PhD in the field of nanocrystal-based flash memory devices in 2016. She has more than 25 years of academic experience. She has published many papers in international journals and conference proceedings, and is member of various reputed national and international professional bodies. Title from PDF title page (viewed on January 4, 2024). Nanoelectronics. 96546 Electronic devices & materials. bicssc 96547 TECHNOLOGY & ENGINEERING / Electronics / General. bisacsh 96548 Dhavse, Rasika, author. 96549 Institute of Physics (Great Britain), publisher. 17702 Print version: 9780750348096 9780750348126 IOP (Series). Release 23. IOP ebooks. 2023 collection. https://iopscience.iop.org/book/mono/978-0-7503-4811-9 E-Books 68374 68374