000			02335nam a2200409 i 4500
999			_c46093 _d46093
003			UDJG
006			a||||go|||| 001 0
007			cr || aaaaaaaaa
008			200916t2016 gw ||go|||| 001 0 eng d
020			_a9781501501531
040			_aUDJG _brum
041			_aeng
245	1	0	_aNano devices and sensors _h[online] / _cJuin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung
260			_aBerlin : _bDe Gruyter, _c2016
300			_a1 resursă online _a(220 p.)
505			_tFrontmatter _tEditorial/Foreword _tContents _tSubthreshold behaviors of nanoscale silicon and germanium junctionless cylindrical surrounding-gate MOSFETs _tSilicon-on-Insulator for spintronic applications: Spin lifetime and electric spin manipulation _tMultilevel cell storage and resistance variability in resistive random access memory _tResistive switching characteristics and mechanisms in silicon oxide memory devices _tA Synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic siox-based resistive switching memory _tOn-chip wide range bidirectional current sensor for Li-ion battery management system _tA 12-bit 1-MS/s 26-μW SAR ADC for sensor applications _tA 5.2/5.8 GHz dual band On-Off keying transmitter design for bio-signal transmission _tImpacts of ESD reliability by different layout engineering in the 0.25-μm 60-V high-voltage LDMOS devices _tImpact-based area Allocation for yield optimization in integrated circuits _tEditors _tList of authors
536			_aAchiziție prin proiectul Anelis Plus 2020.
648			_2UDJG
650		7	_2UDJG _aDE-Inginerie electrică _9570
651			_2UDJG
655			_2UDJG
690		7	_935248 _acărți electronice
690		7	_acărți achiziții _93407
690		7	_acărți străine _9102
690		7	_93062 _ainginerie
690		7	_91213 _aștiința materialelor
690		7	_91050 _ananomateriale
690		7	_95146 _ananotehnologii
690		7	_91276 _ainginerie electrică
700	1		_aLIOU, Juin J _940075
700	1		_aLIAW, Shien-Kuei _940076
700	1		_aCHUNG, Yung-Hui _940077
850			_aUDJG
856	4	1	_uhttps://www-degruyter-com.am.e-nformation.ro/search?q1=9781501501531 _zAcces la textul integral numai din contul de acces mobil.
942			_2udc _cEBK