000 04192nam a22005175i 4500
001 978-3-031-45750-0
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020 _a9783031457500
_9978-3-031-45750-0
024 7 _a10.1007/978-3-031-45750-0
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
100 1 _aBanerjee, Amal.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_966579
245 1 0 _aSemiconductor Devices
_h[electronic resource] :
_bDiodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers /
_cby Amal Banerjee.
250 _a1st ed. 2024.
264 1 _aCham :
_bSpringer Nature Switzerland :
_bImprint: Springer,
_c2024.
300 _aXV, 299 p. 87 illus., 32 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSynthesis Lectures on Engineering, Science, and Technology,
_x2690-0327
505 0 _aFundamental Quantum and Statistical Mechanics of Crystalline Solids -- Charge Transport(Current Flow) in Semiconductors -- Homogeneous(np/pn) and Heterogeneous(Np) Semiconductor Junction Fundamentals -- Basic Heterogeneous Bipolar/Bijunction Transistor(HBT) Properties -- Advanced VBIC and Angelov-Chalmers Models for Homogeneous/Heterogeneous Bipolar/Bijunction Transistor -- Heterogeneous Junction Field Effect Devices – Schottky Diode, Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor(HEMT) -- AlGaAs-GaAs, AlGaN-GaN, SiC HEMT Large Signal Model Equivalent Electrical Circuits(Angelov Chalmers Model) – Normally On/Off HEMT, pHEMT, mHEMT and MODFET -- Homogeneous Junction Bipolar/Bijunction Transistor -- Metal Oxide Semiconductor Field Effect Transistor -- Noise in Semiconductor Devices -- Semiconductor Device Manufacturing Technologies -- Designing Transistors for Specific Applications -- Performance Characteristics of Selected Commercial Transistors and Technology Computer Aided Design(TCAD) Tools -- Semiconductor Optoelectronic Devices -- Gallium Nitride - Reigning King of Ultra High Frequency/Power Transistors.
520 _aThis book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device. Examines how a semiconductor device is designed and fabricated to satisfy the requirements of the target application Explains use of standard laboratory equipment to extract key performance characteristics of semiconductor devices Includes examples of TCAD tools fordesign of internal electrical properties of a new semiconductor device.
650 0 _aElectronic circuits.
650 0 _aEmbedded computer systems.
_964625
650 0 _aSolid state physics.
_966580
650 1 4 _aElectronic Circuits and Systems.
650 2 4 _aEmbedded Systems.
650 2 4 _aElectronic Devices.
_966581
710 2 _aSpringerLink (Online service)
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783031457494
776 0 8 _iPrinted edition:
_z9783031457517
776 0 8 _iPrinted edition:
_z9783031457524
830 0 _aSynthesis Lectures on Engineering, Science, and Technology,
_x2690-0327
856 4 0 _uhttps://doi.org/10.1007/978-3-031-45750-0
912 _aZDB-2-SXSC
999 _c56406
_d56406