000			03916nam a22005655i 4500
001			978-3-031-59064-1
003			DE-He213
005			20251030112312.0
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008			240614s2024 sz | s |||| 0|eng d
020			_a9783031590641 _9978-3-031-59064-1
024	7		_a10.1007/978-3-031-59064-1 _2doi
050		4	_aQC610.9-611.8
072		7	_aTJFD5 _2bicssc
072		7	_aSCI077000 _2bisacsh
072		7	_aTJFD _2thema
100	1		_aMönch, Winfried. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _978700
245	1	0	_aElectronic Structure of Semiconductor Interfaces _h[electronic resource] / _cby Winfried Mönch.
250			_a1st ed. 2024.
264		1	_aCham : _bSpringer Nature Switzerland : _bImprint: Springer, _c2024.
300			_aX, 150 p. 123 illus., 65 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSynthesis Lectures on Engineering, Science, and Technology, _x2690-0327
505	0		_aIntroduction -- Experimental Data Base -- From the Schottky-Mott Rule to Interface-Induced Gap States -- Interface-Induced Gap States -- Comparison of Theoretical and Experimental Data -- Irradiation- or Defect-Induced Gap States -- Conclusions.
520			_aThis concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains the formation of interface-induced gap states and electric dipoles in Schottky contacts and heterostructures Includes experimental Schottky barrier heights, slope parameters, and valence-band offsets for a range of semiconductors Compares theoretical and experimental barrier heights of Schottky contacts and valence-band offsets of heterostructures.
650		0	_aSemiconductors. _969883
650		0	_aCondensed matter. _966773
650		0	_aMetals.
650		0	_aMaterials _xAnalysis.
650		0	_aValence (Theoretical chemistry). _978701
650	1	4	_aSemiconductors. _969883
650	2	4	_aCondensed Matter Physics. _971872
650	2	4	_aMetals and Alloys.
650	2	4	_aMaterials Characterization Technique.
650	2	4	_aValence-Bond Theory. _978702
710	2		_aSpringerLink (Online service)
773	0		_tSpringer Nature eBook
776	0	8	_iPrinted edition: _z9783031590634
776	0	8	_iPrinted edition: _z9783031590658
776	0	8	_iPrinted edition: _z9783031590665
830		0	_aSynthesis Lectures on Engineering, Science, and Technology, _x2690-0327
856	4	0	_uhttps://doi.org/10.1007/978-3-031-59064-1
912			_aZDB-2-SXSC
999			_c60731 _d60731