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001			978-981-97-4623-1
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008			240903s2024 si | s |||| 0|eng d
020			_a9789819746231 _9978-981-97-4623-1
024	7		_a10.1007/978-981-97-4623-1 _2doi
050		4	_aTK7867-7867.5
072		7	_aTJFC _2bicssc
072		7	_aTEC008010 _2bisacsh
072		7	_aTJFC _2thema
245	1	0	_aBeyond Si-Based CMOS Devices _h[electronic resource] : _bMaterials to Architecture / _cedited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan.
250			_a1st ed. 2024.
264		1	_aSingapore : _bSpringer Nature Singapore : _bImprint: Springer, _c2024.
300			_aXIV, 326 p. 100 illus., 82 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringer Tracts in Electrical and Electronics Engineering, _x2731-4219
505	0		_a Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.
520			_aThis book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.
650		0	_aElectronic circuits.
650		0	_aMicroprocessors. _959300
650		0	_aComputer architecture.
650		0	_aMaterials.
650	1	4	_aElectronic Circuits and Systems.
650	2	4	_aProcessor Architectures.
650	2	4	_aMaterials for Devices.
700	1		_aSingh, Sangeeta. _eeditor. _0(orcid)0000-0002-1185-0540 _1https://orcid.org/0000-0002-1185-0540 _4edt _4http://id.loc.gov/vocabulary/relators/edt _983672
700	1		_aSharma, Shashi Kant. _eeditor. _4edt _4http://id.loc.gov/vocabulary/relators/edt _983673
700	1		_aNandan, Durgesh. _eeditor. _4edt _4http://id.loc.gov/vocabulary/relators/edt _983674
710	2		_aSpringerLink (Online service)
773	0		_tSpringer Nature eBook
776	0	8	_iPrinted edition: _z9789819746224
776	0	8	_iPrinted edition: _z9789819746248
776	0	8	_iPrinted edition: _z9789819746255
830		0	_aSpringer Tracts in Electrical and Electronics Engineering, _x2731-4219 _966106
856	4	0	_uhttps://doi.org/10.1007/978-981-97-4623-1
912			_aZDB-2-ENG
912			_aZDB-2-SXE
999			_c63089 _d63089