000			03574nam a22003974u 4500
001			10.1002/9781394188970
003			Wiley
005			20251030120303.0
007			cr nn 008mam|a
008			240528t2024||||xxu fs| |0|| 0|eng||
020			_a9781394188970 _qelectronic
024	7		_a10.1002/9781394188970 _2doi
041			_aeng
245	0	0	_aAdvanced Nanoscale MOSFET Architectures _bCurrent Trends and Future Perspectives _h[electronic resource] _cEdited by Kalyan Biswas, Angsuman Sarkar.
250			_a1
260			_bWiley _c2024
264		1	_bWiley _c2024
300			_a336pp.;
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _2rdaft
347			_bPDF
520			_aComprehensive reference on the fundamental principles and basic physics dictating metal-oxide-semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal-oxide-semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon-germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
650		4	_aNanotechnology General _991126
650		4	_aSemiconductors _969883
650		4	_aMEMS and Nanoelectronics _991127
653	0	0	_ananoscale MOSFET; FinFET; graphene; GaN; TCAD; RF analog performance; semiconductors; High-k gate dielectrics; metal gate electrodes; multi-gate MOSFETs; gate stack processing; metal gate modification; heterostructure MOSFET
700	1		_aBiswas, Kalyan _4edt _991128
700	1		_aSarkar, Angsuman _4edt _940022
776	0	8	_iPrinted edition: _z9781394188949
856	4	0	_uhttps://doi.org/10.1002/9781394188970 _aWiley Online Library
856	4	0	_uhttps://onlinelibrary.wiley.com/action/showBook?doi=10.1002%2F9781394188970 _aWiley Online Library
856	4	2	_3Cover Image _uhttps://onlinelibrary.wiley.com/cms/asset/602ee35e-dbc9-40e6-87bf-10a6b57f8e82/9781394188970.cover.gif _aWiley Online Library
999			_c66868 _d66868