| 000 | 03458cam a2200613 i 4500 | ||
|---|---|---|---|
| 001 | 9780429198540 | ||
| 003 | FlBoTFG | ||
| 005 | 20251030122307.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 220723t20232023flua obf 001 0 eng | ||
| 040 |
_aOCoLC-P _beng _erda _cOCoLC-P |
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| 020 |
_a9780429198540 _qelectronic book |
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| 020 |
_a042919854X _qelectronic book |
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| 020 |
_a9780429579837 _qelectronic book |
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_a0429579837 _qelectronic book |
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| 020 |
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| 020 |
_z9780367188269 _qhardcover |
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| 020 |
_z9781032383576 _qpaperback |
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| 024 | 7 |
_a10.1201/9780429198540 _2doi |
|
| 035 | _a(OCoLC)1342510340 | ||
| 035 | _a(OCoLC-P)1342510340 | ||
| 050 | 0 | 4 |
_aTK7871.15.S56 _bH36 2023 |
| 072 | 7 |
_aSCI _x055000 _2bisacsh |
|
| 072 | 7 |
_aTEC _x021000 _2bisacsh |
|
| 072 | 7 |
_aTGM _2bicssc |
|
| 245 | 0 | 0 |
_aHandbook of silicon carbide materials and devices / _cedited by Zhe Chuan Feng. |
| 250 | _aFirst edition. | ||
| 264 | 1 |
_aBoca Raton, FL : _bCRC Press, _c2023. |
|
| 264 | 4 | _c©2023 | |
| 300 |
_a1 online resource (xix, 444 pages) : _billustrations. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 490 | 1 | _aSeries in materials science and engineering | |
| 520 |
_a"This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs"-- _cProvided by publisher. |
||
| 588 | _aOCLC-licensed vendor bibliographic record. | ||
| 650 | 0 |
_aElectronics _xMaterials. _967189 |
|
| 650 | 0 |
_aSilicon carbide _xElectric properties. _996221 |
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| 650 | 0 |
_aSemiconductor films. _996222 |
|
| 650 | 0 |
_aEpitaxy. _996223 |
|
| 650 | 7 |
_aSCIENCE / Physics _2bisacsh _992668 |
|
| 650 | 7 |
_aTECHNOLOGY / Material Science _2bisacsh _992558 |
|
| 700 | 1 |
_aFeng, Zhe Chuan, _eeditor. _995921 |
|
| 830 | 0 |
_aSeries in materials science and engineering. _996224 |
|
| 856 | 4 | 0 |
_3Taylor & Francis _uhttps://www.taylorfrancis.com/books/9780429198540 |
| 856 | 4 | 2 |
_3OCLC metadata license agreement _uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf |
| 942 | _cE-Books | ||
| 999 |
_c68303 _d68303 |
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