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024 7 _a10.1088/978-0-7503-4811-9
_2doi
035 _a(CaBNVSL)thg00083717
035 _a(OCoLC)1416752870
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aTK7874.84
_bP376 2023eb
072 7 _aTJFD
_2bicssc
072 7 _aTEC008000
_2bisacsh
100 1 _aParekh, Rutu,
_eauthor.
_996545
245 1 0 _aNanoelectronics :
_bphysics, technology and applications /
_cRutu Parekh, Rasika Dhavse.
264 1 _aBristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
_bIOP Publishing,
_c[2023]
300 _a1 online resource (various pagings) :
_billustrations (some color).
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
490 1 _a[IOP release $release]
490 1 _aIOP ebooks. [2023 collection]
500 _a"Version: 20231101"--Title page verso.
504 _aIncludes bibliographical references.
505 0 _a1. Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond -- 1.1. MOSFETs and their scaling -- 1.2. Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation
505 8 _a2. Introduction and overview of nanoelectronics -- 2.1. Introduction -- 2.2. Market requirements for nanoelectronics -- 2.3. Nanofabrication
505 8 _a3. Introduction to the quantum theory of solids -- 3.1. Classical particles, classical waves and quantum particles -- 3.2. Quantum particles and principles of quantum mechanics -- 3.3. Quantum tunnelling -- 3.4. Quantum confinement -- 3.5. Schrodinger's wave equation--meaning, boundary conditions and applications -- 3.6. Significance of the band theory of solids -- 3.7. Factors affecting the energy band gap -- 3.8. Fermi statistics and electrical conduction in solids
505 8 _a4. Emerging research devices for nanocircuits -- 4.1. Channel-replacement devices -- 4.2. Graphene -- 4.3. Fullerenes and carbon nanotubes -- 4.4. Tunnel field-effect transistor -- 4.5. Nanowire field-effect transistors -- 4.6. P-type III-V channel-replacement devices -- 4.7. N-type Ge channel-replacement devices -- 4.8. Potential evaluation--extending MOSFETs to the end of the roadmap -- 4.9. Quantum confinement and associated devices -- 4.10. Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor -- 4.11. Structure and working principle of single-electron transistors -- 4.12. Other quantum structures and their applications -- 4.13. Nanoelectromechanical systems -- 4.14. Atomic switches -- 4.15. Mott FETs -- 4.16. Negative-capacitance FETs -- 4.17. Alternative information-processing devices
505 8 _a5. Emerging memory devices -- 5.1. Memristors -- 5.2. Magnetoresistive effect for memory applications -- 5.3. Magnetoresistive RAM -- 5.4. Spin-transfer torque magnetic random access memory -- 5.5. All-spin logic -- 5.6. Phase-change memory -- 5.7. Resistive random access memory -- 5.8. Ferroelectric RAM -- 5.9. Mott memory -- 5.10. Carbon-based emerging memory devices -- 5.11. Molecular memory -- 5.12. Macromolecular memory -- 5.13. Racetrack memory -- 5.14. Comparison of memory types
505 8 _a6. Modelling and simulation -- 6.1. Technology modelling and simulation -- 6.2. Circuit simulators -- 6.3. Monte Carlo simulation -- 6.4. Microelectromechanical/nanoelectromechanical device simulators -- 6.5. System-level design
505 8 _a7. Nanofabrication -- 7.1. Microfabrication techniques -- 7.2. Limits of photolithography and advanced lithographic processes -- 7.3. Self-assembly processes -- 7.4. Nano measurement and characterisation tools -- 7.5. Thin-film technology and synthesis -- 7.6. Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies -- 7.7. Process integration
505 8 _a8. Emerging nanoelectronic architectures -- 8.1. Storage class memory -- 8.2. Morphic computing : the architectures that can learn
505 8 _a9. Nanosensors and transducers -- 9.1. Introduction to sensors science and technology -- 9.2. Nanosensors and transducers in food industry, healthcare and defence -- 9.3. Metal nanoparticles and quantum-dots-based sensors -- 9.4. Carbon-nanotubes-based sensors -- 9.5. Electronic skin based on nanotechnology -- 9.6. Microelectromechanical/nanoelectromechanical sensors.
520 3 _aThis course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics. After reading the book, students will be able to understand the applications and design principles of nanodevices and nanosensors. The content is organised into nine chapters, each covering a specific area and written in accessible language. The topics covered include physical and technological limitations of nano CMOS devices, quantum physics, simulation and modelling, nanofabrication, emerging logic and memory devices and application areas including nanoarchitectures, sensors, and transducers. The book is a core text for senior undergraduate and postgraduate courses in nanoelectronics, and a valuable reference for researchers, engineers and specialists in fields including electronic devices, solid-state physics and nanotechnology.
521 _aCore text for senior undergraduate and postgraduate courses in nanoelectronics. These courses are found in departments of electronics and electrical engineering, engineering physics and computer science, nanoscience and nanoengineering.
530 _aAlso available in print.
538 _aMode of access: World Wide Web.
538 _aSystem requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.
545 _aDr. Rutu Parekh is an Associate Professor at DA-IICT, Gandhinagar, India. She received her M. Eng. in Electrical Engineering from Concordia University, Canada, and a PhD in Electrical Engineering (Nanoelectronics) from Universit�e de Sherbrooke, Canada. She was a postdoctoral fellow at Centre of Excellence in Nanoelectronics, IIT Bombay. She is also associated with The Inter-University Centre for Astronomy and Astrophysics, Pune, India, as a Visiting Associate. She holds more than 20 years of national and international experience in research and industry. She has published many articles in international journals and conference proceedings. Her research area includes high voltage ASIC design for space applications and design, modelling, and simulation of nanoelectronic circuits. Dr. Rasika Dhavse is an Associate Professor in the Department of Electronics Engineering at Sardar Vallabhbhai National Institute of Technology, Surat, India. She received her PhD in the field of nanocrystal-based flash memory devices in 2016. She has more than 25 years of academic experience. She has published many papers in international journals and conference proceedings, and is member of various reputed national and international professional bodies.
588 0 _aTitle from PDF title page (viewed on January 4, 2024).
650 0 _aNanoelectronics.
_996546
650 7 _aElectronic devices & materials.
_2bicssc
_996547
650 7 _aTECHNOLOGY & ENGINEERING / Electronics / General.
_2bisacsh
_996548
700 1 _aDhavse, Rasika,
_eauthor.
_996549
710 2 _aInstitute of Physics (Great Britain),
_epublisher.
_917702
776 0 8 _iPrint version:
_z9780750348096
_z9780750348126
830 0 _aIOP (Series).
_pRelease 23.
830 0 _aIOP ebooks.
_p2023 collection.
856 4 0 _uhttps://iopscience.iop.org/book/mono/978-0-7503-4811-9
942 _cE-Books
999 _c68374
_d68374