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020 _a9780750354776
_qebook
020 _a9780750354769
_qmobi
020 _z9780750354752
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020 _z9780750354783
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024 7 _a10.1088/978-0-7503-5477-6
_2doi
035 _a(CaBNVSL)thg00083888
035 _a(OCoLC)1424965858
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aQC761.4
_b.S287 2024eb
072 7 _aPHFC
_2bicssc
072 7 _aSCI077000
_2bisacsh
100 1 _aSato, Takuma,
_d1991-
_eauthor.
_996716
245 1 0 _aRare-earth-free ferrimagnetic Mn4N spintronics /
_cTakashi Suemasu.
264 1 _aBristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) :
_bIOP Publishing,
_c[2024]
300 _a1 online resource (various pagings) :
_billustrations (some color).
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
490 1 _a[IOP release $release]
490 1 _aIOP ebooks. [2023 collection]
500 _a"Version: 20240201"--Title page verso.
504 _aIncludes bibliographical references.
505 0 _a1. Introduction -- 1.1. Origin of magnetic moment -- 1.2. Magnetic properties of materials -- 1.3. Magnetic domain wall dynamics -- 1.4. Spintronics applications of ferrimagnet -- 1.5. Theory of current-induced DW motion -- 1.6. Features of Mn4N
505 8 _a2. Research history of Mn4N-based mixed crystals : several research topics -- 2.1. Non-collinear antiferromagnetic structure of Mn3AN and Kagome lattice -- 2.2. Negative thermal expansion (NTE) and magnetovolume effects (MVE) -- 2.3. Measurement of thermal coefficient of resistivity (TCR) and magnetic order
505 8 _a3. Crystal and magnetic structure of Mn4N -- 3.1. Crystal structure of antiperovskite transition metal nitrides -- 3.2. Mn4N bulk crystals -- 3.3. Mn4N thin films -- 3.4. Summary
505 8 _a4. Ultrafast CIDWM in Mn4N strips -- 4.1. Fabrication process of Hall bars -- 4.2. Equivalency between current and magnetic field -- 4.3. Spin-transfer torque using direct current (DC) -- 4.4. Spin-transfer torque using pulsed current -- 4.5. Summary
505 8 _a5. Growth and characterization of compensated Mn4N epitaxial films -- 5.1. Mn4-xZxN (Z=Ge, Ga, Zn, Cu, Ni, Sn, In, Cd, Ag, Pd) powders -- 5.2. Mn4-xNixN epitaxial films -- 5.3. Mn4-xCoxN epitaxial films -- 5.4. Summary
505 8 _a6. Growth and characterization of nonmagnetic element doped Mn4N epitaxial films -- 6.1. Mn4-xCrxN epitaxial films -- 6.2. Mn4-xInxN epitaxial films -- 6.3. Mn4-xAuxN epitaxial films -- 6.4. Mn4-xSnxN epitaxial films -- 6.5. Summary
505 8 _a7. Ultrafast CIDWM in compensated Mn4N strips -- 7.1. Reaching the compensation point -- 7.2. Growth and structural characterization -- 7.3. Magnetization and transport measurements -- 7.4. Current induced domain wall motion -- 7.5. Analytical modeling of the two sub-lattice system -- 7.6. First-principles calculations and analysis -- 7.7. Analytical modeling of Joule heating in Mn4N wires -- 7.8. Summary
505 8 _a8. Properties of Mn4N-based mixed crystals sorted by doped element -- 8.1. Mn4-xAlxNy -- 8.2. Mn4-xCrxNy -- 8.3. Mn4-xFexN -- 8.4. Mn4-xCoxN -- 8.5. Mn4-xNixN -- 8.6. Mn4-xCuxN -- 8.7. Mn4-xZnxN -- 8.8. Mn4-xGaxN -- 8.9. Mn4-xGexN -- 8.10. Mn4-xRhxN -- 8.11. Mn4-xPdxN -- 8.12. Mn4-xAgxN -- 8.13. Mn4-xInxN -- 8.14. Mn4-xSnxN -- 8.15. Mn4-xSbxN -- 8.16. Mn4-xPtxN -- 8.17. Mn4-xAuxN -- 8.18. Mn4-xGdxN -- 8.19. Mn4-xDyxN
505 8 _a9. Recent progress -- 9.1. Ultrathin film growth -- 9.2. Magnetic skyrmions and Dzyaloshinskii Moriya interaction -- 9.3. SOT switching -- 9.4. Anomalous Nernst effect -- 9.5. Modulation of the magnetic properties by light element doping -- 9.6. Perspective.
520 3 _aSince the discovery of perpendicular magnetic anisotropy in Mn4N epitaxial films in 2012, Mn4N has attracted much attention as a rare-earth free new spintronics material. The recent record velocity of current-induced magnetic wall motion achieved on Mn4N and compensated Mn4N microstrips at room temperature has attracted a great deal of attention, and spin transfer torques have renewed interest. Mn4N shows interesting phenomena that magnetization and angular momentum compensation due to impurity doping occur at room temperature. It also has other very unusual properties such as a negative thermal expansion coefficient. In addition, a very large number of different kinds of mixed crystals have been formed. Specifically, they include Mn4N doped with various impurities (Fe, Co, Ni, Cu, Zn, Al, In, Ga, Ge, Sn, Pd, Ag, Sb, Pt, Au, Gd, and Dy).
521 _aGraduate students studying in the fields of condensed matter physics, materials science and devices.
530 _aAlso available in print.
538 _aMode of access: World Wide Web.
538 _aSystem requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.
545 _aTakashi Suemasu obtained his Bachelor of Engineering in 1991, Master of Engineering in 1993, and PhD degree in 1996 from the Tokyo Institute of Technology. He was then a research associate and Associate Professor at University of Tsukuba, before becoming a full Professor in 2010. He was also previously a Senior Scientific Research Specialist of the Ministry of Education, Culture, Sports, Science and Technology and is currently a Program officer at JSPS Research Centre for Science Systems. Professor Suemasu has published more than 480 research articles and has an h-index of 45 (Web of Science).
588 0 _aTitle from PDF title page (viewed on March 4, 2024).
650 0 _aFerrimagnetism.
_996717
650 0 _aSpintronics.
_980738
650 0 _aMetals
_xProperties.
_996718
650 7 _aCondensed matter physics (liquid state & solid state physics)
_2bicssc
650 7 _aSCIENCE / Physics / Condensed Matter.
_2bisacsh
_996719
710 2 _aInstitute of Physics (Great Britain),
_epublisher.
_917702
776 0 8 _iPrint version:
_z9780750354752
_z9780750354783
830 0 _aIOP (Series).
_pRelease 23.
830 0 _aIOP ebooks.
_p2023 collection.
856 4 0 _uhttps://iopscience.iop.org/book/mono/978-0-7503-5477-6
942 _cE-Books
999 _c68415
_d68415